Lam Research Rainbow AutoEtch Plasma Etch Equipment

Posted on 1/23/2013
7963 days to go

by Peter Chen (peterchen@allwin21.com) in CA,United States 


sales@allwin21.com


http://www.allwin21.com/lam-reserach-plasma-etching.asp

Allwin21 Corp. focuses on and professionally provides the following fully refurbished and customized Lam Research AutoEtch and Rainbow quipment with high Quality,rightCost,quick Delivery and excelentService for Semiconductor industry,MEMS, Biomedical, Nanotechnology,Solar,LEDs etc.

Lam Rainbow 4420/4428 | Lam Rainbow 4520/4528 | Lam Rainbow 4620/4628 |Lam Rainbow 4720/4728 | Lam AutoEtch 490 | Lam AutoEtch 590 | Lam AutoEtch 690 | Lam AutoEtch 790


Etching is used in microfabrication to chemically remove layers from the surface of a wafer during manufacturing. Etching is a critically important process module, and every wafer undergoes many etching steps before it is complete.
If the etch is intended to make a cavity in a material, the depth of the cavity may be controlled approximately using the etching time and the known etch rate. More often, though, etching must entirely remove the top layer of a multilayer structure, without damaging the underlying or masking layers. The etching system's ability to do this depends on the ratio of etch rates in the two materials (selectivity).
Some etches undercut the masking layer and form cavities with sloping sidewalls. The distance of undercutting is called bias. Etchants with large bias are called isotropic.
Modern VLSI processes avoid wet etching, and use plasma etching instead. Plasma systems can operate in several modes by adjusting the parameters of the plasma. Ordinary plasma etching operates between 0.1 and 5 Torr. (This unit of pressure, commonly used in vacuum engineering, equals approximately 133.3 pascals) The plasma produces energetic free radicals, neutrally charged, that react at the surface of the wafer. Since neutral particles attack the wafer from all angles, this process is isotropic.
The source gas for the plasma usually contains small molecules rich in chlorine or fluorine. For instance, carbon tetrachloride (CCl4) etches silicon and aluminium, and trifluoromethane etches silicon dioxide and silicon nitride. A plasma containing oxygen is used to oxidize ("ash") photoresist and facilitate its removal.

Reactive-ion etching (RIE) is an etching technology used in microfabrication. It uses chemically reactive plasma to remove material deposited on wafers. The plasma is generated under low pressure (vacuum) by an electromagnetic field. High-energy ions from the plasma attack the wafer surface and react with it.

An inductively coupled plasma (ICP) is a type of plasma source in which the energy is supplied by electric currents which are produced by electromagnetic induction, that is, by time-varying magnetic fields


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